AM29PDL128G70 SPANSION [SPANSION], AM29PDL128G70 Datasheet - Page 33

• Manufacturer Part Number: AM29PDL128G70
• Description: 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

32
(Double Word
Addresses
Mode)
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
(Word Mode)
Addresses
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
Table 12. Device Geometry Definition
00FDh
0018h
0005h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Data
P R E L I M I N A R Y
Am29PDL128G
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
N
byte
Description
N
July 29, 2002