MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet - Page 41

• Manufacturer Part Number: MT47H32M16HR-25E AIT:G
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
• Manufacturer: Micron

Input Electrical Characteristics and Operating Conditions
Table 14: Input DC Logic Levels
All voltages are referenced to V
Table 15: Input AC Logic Levels
All voltages are referenced to V
Figure 10: Single-Ended Input Signal Levels
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter
Input high (logic 1) voltage
Input low (logic 0) voltage
Parameter
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
Note:
Note:
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
1. V
1. Refer to AC Overshoot/Undershoot Specification (page 51).
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
SS
SS
DDQ
Input Electrical Characteristics and Operating Conditions
+ 300mV allowed provided 1.9V is not exceeded.
Micron Confidential and Proprietary
Symbol
V
V
IH(DC)
IL(DC)
41
512Mb: x8, x16 Automotive DDR2 SDRAM
Symbol
V
V
V
V
V
IH(AC)
IH(AC)
IL(AC)
IL(AC)
REF(DC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–300
Min
+ 125
V
V
REF(DC)
REF(DC)
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
–300
–300
Min
+ AC noise
+ DC error
- DC error
- AC noise
+ 250
+ 200
V
REF(DC)
‹ 2010 Micron Technology, Inc. All rights reserved.
V
Max
DDQ
V
V
REF(DC)
REF(DC)
- 125
1
V
V
Max
DDQ
DDQ
- 250
- 200
1
1
Units
mV
mV
Units
mV
mV
mV
mV