MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet - Page 51

• Manufacturer Part Number: MT47H32M16HR-25E AIT:G
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
• Manufacturer: Micron

AC Overshoot/Undershoot Specification
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 19: Overshoot
Figure 20: Undershoot
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 19)
Maximum peak amplitude allowed for undershoot area
(see Figure 20)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 19)
Maximum peak amplitude allowed for undershoot area
(see Figure 20)
Maximum overshoot area above V
Maximum undershoot area below V
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 and Table 26.
V
V
DD
V
SS
SS
/V
/V
/V
DDQ
SSQ
DD
DDQ
SSQ
SS
SSQ
(see Figure 19)
(see Figure 20)
(see Figure 19)
(see Figure 20)
Micron Confidential and Proprietary
Maximum amplitude
Maximum amplitude
51
512Mb: x8, x16 Automotive DDR2 SDRAM
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.5 Vns
0.5 Vns
0.19 Vns
0.19 Vns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Undershoot area
Overshoot area
-25/-25E
0.66 Vns
0.66 Vns
-25/-25E
0.23 Vns
0.23 Vns
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
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1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E