MM912F634DV1AER2 Freescale Semiconductor, MM912F634DV1AER2 Datasheet - Page 22
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MM912F634DV1AER2
Manufacturer Part Number
MM912F634DV1AER2
Description
16-bit Microcontrollers - MCU DUAL LS/HS SWITCH W. LIN
Manufacturer
Freescale Semiconductor
Datasheet
1.MM912G634DV1AE.pdf
(338 pages)
Specifications of MM912F634DV1AER2
Rohs
yes
Core
HCS12
Processor Series
MM912F634
Data Bus Width
16 bit
Maximum Clock Frequency
20 MHz
Program Memory Size
32 KB
Data Ram Size
2 KB
On-chip Adc
Yes
Operating Supply Voltage
4.5 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-48
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
15
Interface Type
SPI
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
6
Number Of Timers
1
Program Memory Type
Flash
Supply Voltage - Max
4.5 V
Supply Voltage - Min
4.5 V
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Electrical Characteristics
3.6
Dynamic electrical characteristics noted under conditions 5.5V VSUP 18 V, -40 °C T
Typical values noted reflect the approximate parameter mean at T
3.6.1
Table 26. Dynamic Electrical Characteristics - Modes of Operation
Table 27. Dynamic Electrical Characteristics - Power Supply
Table 28. Dynamic Electrical Characteristics - Die to Die Interface - D2D
Table 29. Dynamic Electrical Characteristics - Resets
Table 30. Dynamic Electrical Characteristics - Wake-up / Cyclic Sense
Freescale Semiconductor
VDD Short Timeout
Analog Base Clock
Reset Delay
Glitch Filter Low Battery Warning (LBI)
Glitch Filter Low Voltage Warning (LVI)
Glitch Filter High Voltage Warning (HVI)
Note:
Operating Frequency (D2DCLK, D2D[0:3])
Note:
Reset Deglitch Filter Time
Reset Low Level Duration
Lx Wake-up Filter Time
Cyclic Sense / Forced Wake-up Timing Accuracy - not trimmed
Cyclic Sense / Forced Wake-up Timing Accuracy - trimmed
Time between HSx on and Lx sense during cyclic sense
HSx ON duration during Cyclic Sense
HSx ON duration during Cyclic Sense - trimmed
Note:
27.
28.
29.
Guaranteed by design.
f
Trimming parameters are not available in Sleep mode.
BUSMAX
Dynamic Electrical Characteristics
Dynamic Electrical Characteristics Analog Die
frequency ratings differ by device and is specified in
Ratings
Ratings
Ratings
Ratings
Ratings
(27)
(27)
(27)
(29)
(29)
Table 1
A
= 25 °C under nominal conditions unless otherwise noted.
t
Symbol
Symbol
Symbol
Symbol
Symbol
RSTLOW
t
t
CS
CS
t
HSONT
f
RSTDF
t
HSON
t
t
f
BASE
WUF
VTO
RST
t
D2D
t
t
LB
HV
t
LV
S
ACT
AC
f
ADC(MIN)
Min
Min
Min
Min
Min
-5.0
110
140
140
140
180
1.2
-35
-
-
-
-
-
same as t
A
Dynamic Electrical Characteristics
105 °C, unless otherwise noted.
HSON
Typ
150
100
200
Typ
Typ
Typ
200
Typ
200
200
2.0
2.0
2.0
2.0
20
-
-
-
/ t
HSONT
f
BUSMAX
Max
Max
Max
Max
Max
205
280
280
280
220
3.0
5.0
35
-
-
-
-
(28)
MM912F634
MHz
Unit
Unit
Unit
Unit
Unit
kHz
ms
µs
µs
µs
µs
µs
µs
s
s
s
%
%
-
22
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