MM912F634DV1AER2 Freescale Semiconductor, MM912F634DV1AER2 Datasheet - Page 38
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MM912F634DV1AER2
Manufacturer Part Number
MM912F634DV1AER2
Description
16-bit Microcontrollers - MCU DUAL LS/HS SWITCH W. LIN
Manufacturer
Freescale Semiconductor
Datasheet
1.MM912G634DV1AE.pdf
(338 pages)
Specifications of MM912F634DV1AER2
Rohs
yes
Core
HCS12
Processor Series
MM912F634
Data Bus Width
16 bit
Maximum Clock Frequency
20 MHz
Program Memory Size
32 KB
Data Ram Size
2 KB
On-chip Adc
Yes
Operating Supply Voltage
4.5 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-48
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
15
Interface Type
SPI
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
6
Number Of Timers
1
Program Memory Type
Flash
Supply Voltage - Max
4.5 V
Supply Voltage - Min
4.5 V
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Electrical Characteristics
3.8
All ESD testing is in conformity with CDF-AEC-Q100 stress test qualification for automotive grade integrated circuits. During the
device qualification, ESD stresses were performed for the Human Body Model (HBM), Machine Model (MM), Charge Device
Model (CDM), as well as LIN transceiver specific specifications.
A device will be defined as a failure if after exposure to ESD pulses, the device no longer meets the device specification.
Complete DC parametric and functional testing is performed per the applicable device specification at room temperature,
followed by hot temperature, unless specified otherwise in the device specification.
Table 46. ESD and Latch-up Protection Characteristics
Freescale Semiconductor
ESD - Human Body Model (HBM) following AEC-Q100 / JESD22-A114
(C
- LIN (DGND, PGND, AGND, and LGND shorted)
- VS1, VS2, VSENSE, Lx
- HSx
- All other Pins
ESD - Charged Device Model (CDM) following AEC-Q100,
Corner Pins (1, 12, 13, 24, 25, 36, 37, and 48)
All other Pins
ESD - Machine Model (MM) following AEC-Q100
(C
Latch-up current at T
ESD GUN - LIN Conformance Test Specification
discharge, C
- LIN (with or without bus filter C
- VS1, VS2 with C
- Lx with serial R
ESD GUN - IEC 61000-4-2 Test Specification
discharge, C
- LIN (with or without bus filter C
- VSENSE with serial R
- VS1, VS2 with C
- Lx with serial R
ESD GUN - ISO10605 Test Specification
C
- LIN (with or without bus filter C
- VSENSE with serial R
- VS1, VS2 with C
- Lx with serial R
ESD GUN - ISO10605 Test Specification
C
- LIN (with or without bus filter C
- VSENSE with serial R
- VS1, VS2 with C
- Lx with serial R
Note:
52.
53.
54.
55.
ZAP
ZAP
ZAP
ZAP
= 150 pF, R
= 330 pF, R
= 100 pF, R
= 200 pF, R
Input Voltage Limit = -2.5 to 7.5 V.
With C
Certification available on request
Tested internally only; certification pending
ESD Protection and Latch-up Immunity
ZAP
ZAP
VBAT
= 150 pF, R
= 150 pF, R
LX
LX
ZAP
LX
ZAP
LX
ZAP
ZAP
VS
VS
VS
VS
(10…100 nF) as part of the battery path.
A
= 2.0 k
= 2.0 k
= 1500 )
= 0 ), All Pins
= 125 C
VSENSE
VSENSE
VSENSE
ZAP
ZAP
(53)
(53)
(53)
(52)
= 330 .
= 330
BUS
BUS
BUS
BUS
Ratings
=220 pF)
=220 pF)
=220pF)
=220 pF)
(55)
(55)
, unpowered, contact discharge,
, powered, contact discharge,
(55)
(54)
, unpowered, contact
, unpowered, contact
Symbol
V
V
V
I
CDM
LAT
HBM
MM
ESD Protection and Latch-up Immunity
±15000
±20000
±8000
±4000
±3000
±2000
±6000
±8000
±8000
±8000
±8000
±6000
±6000
±6000
±6000
±8000
±8000
±8000
±8000
Value
±750
±500
±200
±100
MM912F634
Unit
mA
V
V
V
V
V
V
V
38
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