MT48H8M16LFB4-8 TR Micron Technology Inc, MT48H8M16LFB4-8 TR Datasheet - Page 42

• Manufacturer Part Number: MT48H8M16LFB4-8 TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1052-2

Table 15: I
Table 16: Capacitance
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
Paramter
Input Capacitance: CLK
Input Capacitance: All other input-only balls
Input/Output Capacitance: DQ
Temperature Compensated Self Refresh
Parameter/Condition
Self Refresh Current:
CKE < 0.2V – 2 Banks Open
Self Refresh Current:
CKE < 0.2V – 1 Bank Open
Self Refresh Current:
CKE < 0.2V – 1/2 Bank Open
Self Refresh Current:
CKE < 0.2V – 1/4 Bank Open
Self Refresh Current:
CKE < 0.2V – 4 Banks Open
Notes: 4; notes appear on page 43; V
Note: 2; notes appear following on page 43
DD
7 - Self Refresh Current Options
DD
= V
DD
Q = +1.8V ±0.1V
42
Temperature
Symbol
Maximum
C
C
C
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
IO
I
I
1
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
1.5
1.5
3.0
-8 / -10
Absolute Maximum Ratings
200
160
140
120
160
130
120
110
130
120
110
100
120
110
100
115
105
90
95
90
128Mb: x16 Mobile SDRAM
MAX
4.0
4.0
6.0
©2003 Micron Technology, Inc. All rights reserved.
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
Units
pF
pF
pF
Notes
Notes
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
29
30
31