MT48H8M16LFB4-8 TR Micron Technology Inc, MT48H8M16LFB4-8 TR Datasheet - Page 44

IC SDRAM 128MBIT 125MHZ 54VFBGA

MT48H8M16LFB4-8 TR

Manufacturer Part Number
MT48H8M16LFB4-8 TR
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-8 TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1052-2
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
23. The clock frequency must remain constant (stable clock is defined as a signal cycling
24. Auto precharge mode only. The precharge timing budget (
25. Precharge mode only.
26. JEDEC and PC100 specify 3 clocks.
27.
28. Parameter guaranteed by design.
29. PC100 specifies a maximum of 4pF.
30. PC100 specifies a maximum of 5pF.
31. PC100 specifies a maximum of 6.5pF.
32. For -8, CL = 2,
33. CKE is HIGH during REFRESH command period
34. Deep power-down current is a nominal value at 25°C. The parameter is not tested.
within timing constraints specified for the clock pin) during access or precharge
states (READ, WRITE, including
used to reduce the data rate.
after the first clock delay, after the last WRITE is executed. May not exceed limit set for
precharge mode.
t
I
AC for -8 at CL = 3 with no load = 6ns, and is guaranteed by design.
DD
6 limit is actually a nominal value and does not result in a fail value.
t
CK = 9.6ns. For -10, CL = 3 and
44
t
WR, and PRECHARGE commands). CKE may be
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CK = 9.6ns.
128Mb: x16 Mobile SDRAM
t
RFC (MIN) else CKE is LOW. The
©2003 Micron Technology, Inc. All rights reserved.
t
RP) begins at 7ns for -8
Notes

Related parts for MT48H8M16LFB4-8 TR