MT48H8M16LFB4-8 TR Micron Technology Inc, MT48H8M16LFB4-8 TR Datasheet - Page 50

• Manufacturer Part Number: MT48H8M16LFB4-8 TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1052-2

Figure 36: READ – Without Auto Precharge
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Notes: 1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRE-
t RCD
t RAS
t RC
t CK
T1
2. A9 and A11 are “Don’t Care.”
NOP
DISABLE AUTO PRECHARGE
CHARGE.
t CMS
t CL
COLUMN m
T2
BANK
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
T4
D
NOP
OUT
t OH
50
t AC
m
D
T5
OUT
NOP
t OH
m+1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t AC
SINGLE BANKS
ALL BANKS
PRECHARGE
BANK(S)
D
T6
OUT
t OH
m+2
t RP
t AC
128Mb: x16 Mobile SDRAM
D
T7
NOP
OUT
t OH
m+3
t HZ
©2003 Micron Technology, Inc. All rights reserved.
BANK
ROW
ACTIVE
ROW
T8
DON’T CARE
UNDEFINED
Timing Diagrams