MT48H8M16LFB4-8 TR Micron Technology Inc, MT48H8M16LFB4-8 TR Datasheet - Page 57

• Manufacturer Part Number: MT48H8M16LFB4-8 TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1052-2

Figure 43: WRITE – Without Auto Precharge
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
Notes: 1. For this example, BL = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
t RCD
t RAS
t RC
t CK
T1
NOP
2. 15ns is required between <D
3. A9 and A11 are “Don’t Care.”
quency.
DISABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 3
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
57
IN
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
NOP
T6
2
SINGLE BANK
PRECHARGE
ALL BANKS
128Mb: x16 Mobile SDRAM
BANK
T7
©2003 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
Timing Diagrams
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE