MT48H8M16LFB4-8 TR Micron Technology Inc, MT48H8M16LFB4-8 TR Datasheet - Page 61

• Manufacturer Part Number: MT48H8M16LFB4-8 TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1052-2

Figure 47: Alternating Bank Write Accesses
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
DQMU, DQML
COMMAND
A0–A9, A11
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
Notes: 1. For this example, BL = 4.
t CK
T1
NOP
2. A9 and A11 are “Don’t Care.”
ENABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 2
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
BANK 1
ACTIVE
IN
ROW
T4
ROW
m + 2
t DH
61
t RCD - BANK 1
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR - BANK 0
ENABLE AUTO PRECHARGE
t DS
COLUMN b 2
BANK 1
WRITE
T6
D
IN
t DH
b
128Mb: x16 Mobile SDRAM
t DS
t RP - BANK 0
D
NOP
T7
IN
b + 1
t DH
©2003 Micron Technology, Inc. All rights reserved.
t DS
D
Timing Diagrams
IN
NOP
T8
b + 2
t DH
t DS
D
BANK 0
ACTIVE
IN
T9
ROW
ROW
b + 3
t
t
DON’T CARE
RCD - BANK 0
WR - BANK 1
t DH