MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 24
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 12:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Nonconsecutive READ Bursts
Notes:
1. D
2. BL = 4 in the cases shown (applies for bursts of 8 as well).
3. Shown with nominal
4. This example represents nonconsecutive READ commands issued to the device.
COMMAND
COMMAND
ADDRESS
ADDRESS
OUT
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
n (or b) = data-out from column n (or column b).
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
CL = 2
t
AC,
NOP
NOP
T1
T1
CL = 3
t
DQSCK, and
24
T1n
T1n
D
OUT
NOP
n
NOP
T2
T2
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
D
n + 1
OUT
T2n
T2n
n + 2
D
D
READ
READ
Bank,
OUT
Bank,
OUT
Col b
Col b
T3
T3
n
n + 3
D
D
n + 1
T3n
T3n
OUT
OUT
CL = 2
DON’T CARE
D
n + 2
OUT
T4
T4
NOP
NOP
CL = 3
©2006 Micron Technology, Inc. All rights reserved.
D
n + 3
T4n
T4n
OUT
D
OUT
b
TRANSITIONING DATA
T5
T5
NOP
NOP
Operations
D
b + 1
OUT
T5n
T5n
D
b + 2
Advance
D
OUT
OUT
b
T6
T6
NOP
NOP