MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 33
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 21:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Random WRITE Cycles
Notes:
1. D
2. b' (or x, n, a, g) = the next data-in following D
3. Programmed BL = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
COMMAND
ADDRESS
burst order.
IN
DQS
CK#
DM
DQ
CK
b (or x, n, a, g) = data-in for column b (or x, n, q, g)
WRITE
Bank,
Col b
T0
t
DQSS (NOM)
WRITE
Bank,
Col x
Din
T1
b
33
T1n
D
b'
IN
128Mb: 8 Meg x 16 Mobile DDR SDRAM
WRITE
Bank,
Col n
T2
D
x
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
T2n
D
x'
IN
IN
b (x, n, a, g), according to the programmed
WRITE
Bank,
Col a
T3
D
n
IN
DON’T CARE
T3n
D
n'
IN
WRITE
Bank,
T4
Col g
D
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a
IN
TRANSITIONING DATA
T4n
D
a'
IN
Operations
T5
D
NOP
g
IN
T5n
D
Advance
g'
IN