MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 32
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 19:
Figure 20:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Consecutive WRITE-to-WRITE
Nonconsecutive WRITE-to-WRITE
Notes:
Notes:
1. D
2. An uninterrupted burst of 4 is shown.
3. Each WRITE command may be to any bank.
1. D
2. An uninterrupted burst of 4 is shown.
3. Each WRITE command may be to any bank.
t
t
DQSS (NOM)
DQSS (NOM)
COMMAND
COMMAND
ADDRESS
ADDRESS
IN
IN
DQS
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
CK#
DM
DQ
DQS
CK#
DM
CK
DQ
CK
WRITE
Bank,
Col b
WRITE
T0
Bank,
Col b
T0
t
DQSS
t
DQSS
NOP
D
T1
NOP
b
D
IN
T1
b
IN
32
T1n
D
b+1
T1n
b + 1
IN
D
IN
128Mb: 8 Meg x 16 Mobile DDR SDRAM
WRITE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank,
Col n
b+2
T2
D
b + 2
NOP
D
IN
T2
IN
T2n
D
b+3
T2n
b + 3
IN
D
IN
T3
NOP
D
WRITE
Bank,
Col n
n
T3
IN
DON’T CARE
DON’T CARE
T3n
D
n+1
IN
©2006 Micron Technology, Inc. All rights reserved.
n+2
T4
NOP
D
D
T4
IN
NOP
n
IN
TRANSITIONING DATA
TRANSITIONING DATA
T4n
n+3
T4n
D
n + 1
D
IN
IN
Operations
T5
n + 2
NOP
D
T5
NOP
IN
Advance
T5n
n + 3
D
IN