MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 27
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 15:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
READ-to-WRITE
Notes:
1. D
2. D
3. BL = 4 in the cases shown (applies for bursts of 8 as well; if BL = 2, the BST command shown
4. Shown with nominal
5. BST = BURST TERMINATE command; page remains open.
6. CKE = HIGH.
COMMAND
COMMAND
ADDRESS
ADDRESS
can be a NOP).
OUT
IN
DQS
DQS
CK#
CK#
DM
DM
DQ
DQ
CK
CK
b = data-in from column b.
n = data-out from column n.
READ
Bank,
READ
Col n
Bank,
Col n
T0
T0
CL = 2
t
AC,
BST
BST
T1
T1
t
DQSCK, and
CL = 3
5
5
27
T1n
128Mb: 8 Meg x 16 Mobile DDR SDRAM
D
NOP
OUT
T2
NOP
n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
D
n+1
T2n
T2n
OUT
D
OUT
n
WRITE
NOP
Bank,
Col b
T3
T3
DON’T CARE
D
t
(NOM)
n+1
DQSS
OUT
T3n
T3n
WRITE
Bank,
Col b
T4
T4
NOP
D
©2006 Micron Technology, Inc. All rights reserved.
b
IN
TRANSITIONING DATA
t
(NOM)
T4n
T4n
DQSS
b+1
D
IN
Operations
T5
b+2
D
T5
D
NOP
NOP
b
IN
IN
b+1
D
T5n
T5n
b+3
Advance
D
IN
IN