MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 57
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 35:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Bank Address
(BA0, BA1)
COMMAND 1
Addresses
V
DQS
CK#
CKE
A10
V
DD
DM
DQ
CK
DD
Q
Initialize and Load Mode Registers
Notes:
LVCMOS
HIGH LEVEL
T = 200µs
Power-up: V
NOP 2
2. NOP or DESELECT commands are required for at least 200µs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
1. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH
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DD
command, ACT = ACTIVE command, RA = Row address, BA = Bank address.
and CK stable
t IS
T0
NOP
High-Z
High-Z
t IH
t
CH
t
CK
t
CL
ALL BANKS
t IS
PRE
T1
t IH
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t RP 4
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Ta0
AR
57
t RFC 4
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Load Standard Mode Register
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Tb0
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RFC 4
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t IS
t IS
t IS
BA0 = L,
BA1 = L
CODE
CODE
Tc0
LMR
t IH
t IH
t IH
Load Extended Mode
t MRD 4
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Register
BA0 = L,
BA1 = H
CODE
CODE
Td0
LMR
t MRD 4
©2006 Micron Technology, Inc. All rights reserved.
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Timing Diagrams
Te0
ACT
RA
RA
BA
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DON’T CARE
Tf0
NOP 3
Advance