MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 64
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 42:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
COMMAND
BA0, BA1
A0-A9
DQS
DQ
A11
CK#
CKE
A10
DM
CK
1
4
Bank Write – With Auto Precharge
t
t
IS
IS
NOP 5
T0
t
Notes:
t
IH
IH
t
IS
Bank x
t
1. DI b= data-out from column n.
2. BL = 4 in the case shown.
3. Disable auto precharge.
4. PRE = PRECHARGE, ACT = ACTIVE, RA = Row address, BA = Bank address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these
6.
7.
IS
ACT
T1
RA
RA
RA
t
IH
times.
t
t
t
IH
DSH is applicable during
DSH is applicable during
t
CK
t
t
RCD
RAS
NOP 5
T2
t
CH
t CL
t
WRITE 2
IS
Bank x
3
Col n
T3
t
t
IH
DQSS (NOM)
t
t
DQSS (MIN) and is referenced from CK T4 or T5.
DQSS (MIN) and is referenced from CK T5 or T6.
t
WPRES
64
t
DS
t
WPRE
NOP 5
T4
DI
b
128Mb: 8 Meg x 16 Mobile DDR SDRAM
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 5
T5
t
DQSH
T5n
t
WPST
NOP 5
T6
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t
WR
NOP 5
T7
TRANSITIONING DATA
DON’T CARE
NOP 5
Advance
T8
t
RP