MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 51

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10 IT

Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr

Specifications of MT46H8M16LFCF-10 IT

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 16:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
AC Characteristics
Parameter
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window (DVW)
Average periodic refresh interval
Exit SELF REFRESH to first valid command
Exit power-down mode to first valid command
Minimum
t
CKE HIGH/LOW time
Electrical Characteristics and Recommended AC Operating Conditions (continued)
Notes: 1–6, 27; notes appear on pages 52–54; V
Symbol
t
t
WPRES
t
t
WPRE
WPST
t
t
t
t
WTR
REFI
XSR
t
CKE
WR
na
XP
51
DD
Q = +1.8 ±0.1V, V
Min
0.25
120
0.4
15
t
25
0
1
QH -
2
128Mb: 8 Meg x 16 Mobile DDR SDRAM
-75
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ
Max
15.6
0.6
DD
= +1.8 ±0.1V
Min
0.25
120
0.4
t
15
25
0
1
QH -
2
Electrical Specifications
-10
t
DQSQ
Max
15.6
0.6
©2006 Micron Technology, Inc. All rights reserved.
Units
t
t
t
t
CK
ns
CK
ns
CK
ns
µs
ns
ns
CK
Notes
Advance
17, 18
16
22
20
43
44

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