MT46H8M16LFCF-10 IT Micron Technology Inc, MT46H8M16LFCF-10 IT Datasheet - Page 38
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MT46H8M16LFCF-10 IT
Manufacturer Part Number
MT46H8M16LFCF-10 IT
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H8M16LFCF-10 IT
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 26:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-PRECHARGE – Interrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to same device. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. PRE = PRECHARGE command.
t
mands may be to different devices, in which case
mand could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b.
b
IN
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
D
b+1
IN
D
b+1
IN
NOP
T2
T2n
38
t
T3
NOP
WR
128Mb: 8 Meg x 16 Mobile DDR SDRAM
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PRE
T4
6
DON’T CARE
t
WR is not required and the READ com-
T4n
T5
NOP
TRANSITIONING DATA
©2006 Micron Technology, Inc. All rights reserved.
T6
NOP
Operations
Advance