MCZ33781EK Freescale Semiconductor, MCZ33781EK Datasheet - Page 7

• Manufacturer Part Number: MCZ33781EK
• Description: IC MASTER DSI 2.02 DIFF 32-SOIC
• Manufacturer: Freescale Semiconductor

Specifications of MCZ33781EK

• Applications: Automotive Systems
• Interface: SPI
• Voltage - Supply: 4.75 V ~ 5.25 V
• Package / Case: 32-SOIC (7.5mm Width) Exposed Pad, 32-eSOIC, 32-HSOIC
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 3. Static Electrical Characteristics (continued)
noted. Voltages relative to GND, unless otherwise noted. Typical values noted reflect the approximate mean values of the
parameter at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
BUS TRANSMITTER (DnH, DnL)
Notes
Output Bus Idle Voltage (Drop)
Output Signal High Voltage (Differential)
Output Signal Low Voltage (Differential)
Vmid, (DnH + DnL)/2 (Voltage Halfway Between Bus High Side and
Bus Low Side
VCM Peak to Peak (Maximum Vmid-Minimum Vmid)
For Vmid (Idle), Vmid (Signal_H), Vmid (Signal_L)
Bus Driver Vmid Peak to Peak, (DnH+DnL)/2
For Signal to Idle, Idle, Idle to Signal,
VmidPP(Idle)=Vmid(Max)- Vmid (Min)
Bus Driver Vmid Peak to Peak (Dnh+DnL)/2
For Signal_H to Signal_L, Signal_L, Signal_L to Signal_H, Signal_H
VmidPP(Signal)=Vmid(Max)-Vmid(Min)
Output High Side (DnH) Driver Current Limit
Output Low Side (DnL) Driver Current Limit
Signal mode Over-current Shutdown
Disabled High Side (DnH) Bus Leakage (DnL open)
Disabled Low Side (DnL) Bus Leakage (DnH open)
Characteristics noted under conditions 4.75V ≤ V
5.
6.
7.
8.
9.
I
-12.5mA ≤ InH ≤ 1.0mA, -1.0mA ≤ InL ≤ 12.5mA
-12.5mA ≤ InH ≤ 1.0mA, -1.0mA ≤ InL ≤ 12.5mA
Fault Condition: DnH = 0V
Normal Operation
Fault Condition: DnH = V
Fault Condition: DnL = 0V
Fault Condition: DnL = V
l ISSD l DnH, DnL
DnH = 0V
DnH = V
DnL = 0V
DnL = V
nH
Not measured in production.
InH=bus current at DnH, InL=bus current at DnL
V
Max V
Worst Case Disabled Low Side Bus Leakage for DnL occurs with DnL = V
current can exceed 1mA. This is not measured in production.
= -200mA, I
DnD
SUPn
SUPn
=V
DnD
DnH
A
= 25°C under nominal conditions, unless otherwise noted.
= VSUPn - 2 * V
nL
-V
DnL
= 200mA
Characteristic
SUPn
SUPn
(6)
MID_OFFSET
(5)
(5)
- V
DnD(Drop)
(5)
(6)
(9)
(6)
CC
, V
≤ 5.25V, 9.0V ≤ V
MID_OFFSET
V
V
= |V
V
V
V
DnD(Drop)
MIDPP(SIGNAL)
DnD(HIGH)
DnD(LOW)
MIDPP(IDLE)
I
I
I
I
Symbol
CL(HIGH)
LK(HIGH)
V
CL(LOW)
LK(LOW)
MID
V
MID
I
SSD
CMP
SUPn
SUP
- V
(8)
(7)(8)
and DnH = 0V. In this configuration, the DnL leakage
SUPn
(7)
(7)
≤ 25V,-40°C ≤ T
/ 2|
V
2 - 0.8
4.175
1.175
-600
-400
-350
SUPn
Min
150
200
-1.0
-1.0
-1.0
-1.0
20
–
0
–
–
STATIC ELECTRICAL CHARACTERISTICS
/
A
ELECTRICAL CHARACTERISTICS
V
SUPn
≤ 90°C, unless otherwise
Typ
4.5
1.5
–
–
–
–
–
–
–
–
–
–
–
–
–
/2
V
2 +0.8
4.825
1.825
Max
SUPn
-200
-200
-150
300
350
400
1.6
1.0
1.0
1.0
1.0
30
80
60
/
Unit
mV
mV
mV
mA
mA
mA
mA
mA
V
V
V
V
33781
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