ST92F150CV1TB STMicroelectronics, ST92F150CV1TB Datasheet - Page 382

• Manufacturer Part Number: ST92F150CV1TB
• Description: MCU 8BIT 128K FLASH 100TQFP
• Manufacturer: STMicroelectronics
• Series: ST9r

Specifications of ST92F150CV1TB

• Core Processor: ST9
• Core Size: 8/16-Bit
• Speed: 24MHz
• Connectivity: CAN, EBI/EMI, I²C, LIN, SCI, SPI
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 77
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 100-TQFP, 100-VQFP
• Processor Series: ST92F15x
• Core: ST9
• Data Bus Width: 8 bit, 16 bit
• Data Ram Size: 6 KB
• Interface Type: CAN, I2C, SCI, SPI
• Maximum Clock Frequency: 24 MHz
• Number Of Programmable I/os: 80
• Number Of Timers: 5 x 16 bit
• Operating Supply Voltage: 4.5 V to 5.5 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: ST92F150-EPB
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 16 bit x 10 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4883

ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
Based on a simple application running on the
product, the product is stressed by two electro
magnetic events until a failure occurs.
■
■
A device reset allows normal operations to be re-
sumed.
Designing hardened software to avoid noise
EMC characterization and optimization are per-
formed at component level with a typical applica-
tion environment and simplified MCU software. It
should be noted that good EMC performance is
Electro Magnetic Interference (EMI)
Based on a simple application running on the
product, the product is monitored in terms of emis-
sion. This emission test is in line with the norm
SAE J 1752/3 which specifies the board and the
loading of each pin.
Notes:
1. Data based on characterization results, not tested in production.
382/429
ity)
Functional EMS (Electro Magnetic Susceptibil-
problems
1
Symbol
Symbol
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
V
V
S
FESD
FFTB
EMI
Voltage limits to be applied on any I/O pin to induce a
functional disturbance
Fast transient voltage burst limits to be applied
through 100pF on V
tional disturbance
Peak level
Parameter
DD
Parameter
DD
and V
V
PQFP100 14x20 package
conforming to SAE J 1752/3
and V
DD
DD
=5V, T
pins to induce a func-
SS
through
A
Conditions
=+25°C,
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behaviour
is detected, the software can be improved to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015).
Software recommendations:
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
DD
DD
=5V, T
=5V, T
0.1MHz to 30MHz
30MHz to 130MHz
130MHz to 1GHz
SAE EMI Level
Frequency Band
A
A
Conditions
=+25°C, f
=+25°C, f
Monitored
OSC
OSC
=4MHz
=8MHz
[f
4/10MHz
OSC
Max vs.
3.5
13
25
24
/f
CPU
Level
>1.5
>1.5
]
dBμV
Unit
Unit
-
kV
kV