D13002X16V Renesas Electronics America, D13002X16V Datasheet - Page 173

• Manufacturer Part Number: D13002X16V
• Description: MCU 3/5V 0K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of D13002X16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 38
• Program Memory Type: ROMless
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Operation in Power-Down State: The refresh controller operates in sleep mode. It does not
operate in hardware standby mode. In software standby mode RTCNT is initialized, but RFSHCR,
RTMCSR bits 5 to 3, and RTCOR retain their settings prior to the transition to software standby
mode.
Example 1: Connection to 2WE 1-Mbit DRAM (1-Mbyte Mode): Figure 7-7 shows typical
interconnections to a 2WE 1-Mbit DRAM, and the corresponding address map. Figure 7-8 shows
a setup procedure to be followed by a program for this example. After power-up the DRAM must
be refreshed to initialize its internal state. Initialization takes a certain length of time, which can be
measured by using an interrupt from another timer module, or by counting the number of times
RTMCSR bit 7 (CMF) is set. Note that no refresh cycle is executed for the first refresh request
after exit from the reset state or standby mode (the first time the CMF flag is set; see figure 7-3).
When using this example, check the DRAM device characteristics carefully and use a procedure
that fits them.
H8/3002
H'60000
H'7FFFF
D
15
HWR
to D
LWR
CS
RD
A
A
A
A
A
A
A
A
8
7
6
5
4
3
2
1
3
0
DRAM area
a. Interconnections (example)
b. Address map
156
Area 3 (1-Mbyte mode)
A
A
A
A
A
A
A
A
RAS
CAS
UW
LW
OE
I/O
7
6
5
4
3
2
1
0
15
2
to I/O
16-bit organization
WE
1-Mbit DRAM with
0