HD64F3048F16 Renesas Electronics America, HD64F3048F16 Datasheet - Page 699

• Manufacturer Part Number: HD64F3048F16
• Description: IC H8 MCU FLASH 128K 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048F16

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

21.1.6
Table 21.11 lists the flash memory characteristics.
Table 21.11 Flash Memory Characteristics (1)
Conditions:
Item
Programming time *
Erase time *
Reprogramming count
Programming
Erase
Flash Memory Characteristics
1
*
3
*
5
Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
V
T
a
CC
1
= 0°C to +75°C (program/erase operating temperature range)
*
= 4.5 V to 5.5 V, AV
2
*
4
1
*
5
1
1
1
1
1
1
CC
*
*
1
1
1
1
1
1
4
5
1
= 4.5 V to 5.5 V, V
1
1
1
1
*
4
1
1
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
N
t
t
t
t
t
t
t
t
t
N
P
E
sswe
spsu
sp30
sp200
sp10
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
WEC
Min
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
12
Rev. 3.00 Sep 27, 2006 page 671 of 872
REF
Section 21 Electrical Characteristics
Typ
10
100
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
= 4.5 V to AV
Max
200
1200 ms/block
100
—
—
32
202
12
—
—
—
—
—
1000 Times
—
—
100
—
—
—
—
—
120
Unit
ms/
128 bytes
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
CC
REJ09B0325-0300
, V
SS
Notes
= AV
Programming
time wait
Programming
time wait
Additional
programming
time wait
Erase time wait
SS
= 0 V,