DSPIC30F6010AT-20E/PT Microchip Technology, DSPIC30F6010AT-20E/PT Datasheet - Page 185

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DSPIC30F6010AT-20E/PT

Manufacturer Part Number
DSPIC30F6010AT-20E/PT
Description
IC,DSP,16-BIT,CMOS,TQFP,80PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F6010AT-20E/PT

Rohs Compliant
YES
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
144KB (48K x 24)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
80-TFQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300019 - BOARD DEMO DSPICDEM 80L STARTERXLT80PT3 - SOCKET TRAN ICE 80MQFP/TQFPAC164320 - MODULE SKT MPLAB PM3 80TQFPAC30F007 - MODULE SKT FOR DSPIC30F 80TQFPDM300020 - BOARD DEV DSPICDEM MC1 MOTORCTRL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F6010AT-20E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
TABLE 24-11: ELECTRICAL CHARACTERISTICS: BOR
TABLE 24-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
© 2008 Microchip Technology Inc.
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
Symbol
E
V
T
T
I
E
V
V
V
T
T
T
I
I
DEW
PEW
EB
EB
RETD
RETD
DEW
EB
PEW
D
DRW
P
PR
PEW
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
‘11’ values not in usable operating range.
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program FLASH Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP™ Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
high-to-low
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
DD
Characteristic
transition
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
Min
10K
4.5
3.0
40
40
MIN
MIN
1
(3)
Typ
100K
100
100
1M
10
10
10
2
4
dsPIC30F6010A/6015
(1)
4.58
Min
2.6
4.1
Max
5.5
5.5
5.5
5.5
30
30
30
2
-40°C ≤ T
Typ
-40°C ≤ T
5
(1)
-40°C ≤ T
-40°C ≤ T
Units
Year
Year
E/W
E/W
mA
mA
mA
ms
ms
ms
V
V
V
V
Max
2.71
4.73
A
A
4.4
≤ +85°C for Industrial
≤ +125°C for Extended
-40°C ≤ T
Using EECON to read/write
V
voltage
Provided no other specifications
are violated
Row Erase
-40°C ≤ T
V
voltage
Provided no other specifica-
tions are violated
Row Erase
Bulk Erase
A
A
MIN
MIN
≤ +85°C for Industrial
≤ +125°C for Extended
Units
= Minimum operating
= Minimum operating
mV
V
V
V
V
A
A
Conditions
≤ +85°C
≤ +85°C
Not in operating
range
DS70150D-page 185
Conditions

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