HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 12
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HSG1002VE-TL-E
Manufacturer Part Number
HSG1002VE-TL-E
Description
IC AMP HBT SIGE 38GHZ MFPAK-4
Manufacturer
Renesas Electronics America
Datasheet
1.HSG1002VE-TL-E.pdf
(40 pages)
Specifications of HSG1002VE-TL-E
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
38GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
4-MFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HSG1002
Rev.1.00, Apr.12.2004, page 10 of 37
0
–.2
Condition: VCE = 2 V , Zo = 50 Ω
100 to 6000 MHz (100 MHz step)
.2
Condition: VCE = 2 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
1000 to 2000 MHz (200 MHz step)
2000 to 6000 MHz (400 MHz step)
–.4
.4
S
S
12
11
.2
–.6
IC = 1 mA
IC = 3 mA
IC = 5 mA
IC = 7 mA
IC = 1 mA
IC = 3 mA
IC = 5 mA
IC = 7 mA
Parameter vs. Frequency
Parameter vs. Frequency
.6
.4
–.8
.8
.6
.8
0.5
0.4
0.3
0.2
0.1
–1
1
1
1.5
–1.5
2
1.5
3 4
Scale: 0.1 / div.
IC = 10 mA
IC = 20 mA
IC = 30 mA
IC = 10 mA
IC = 20 mA
IC = 30 mA
–2
2
5
–3
3
–4
4
5
–5
10
–10
0
–.2
.2
Condition: VCE = 2 V , Zo = 50 Ω
100 to 6000 MHz (100 MHz step)
Condition: VCE = 2 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
1000 to 2000 MHz (200 MHz step)
2000 to 6000 MHz (400 MHz step)
–.4
.4
S
S
21
22
.2
–.6
.6
Parameter vs. Frequency
Parameter vs. Frequency
IC = 1 mA
IC = 3 mA
IC = 5 mA
IC = 7 mA
IC = 1 mA
IC = 3 mA
IC = 5 mA
IC = 7 mA
.4
–.8
.8
.6
.8
75
60
45
30
–1
1
1
15
1.5
–1.5
2
1.5
3 4
Scale: 15 / div.
–2
2
IC = 10 mA
IC = 20 mA
IC = 30 mA
IC = 10 mA
IC = 20 mA
IC = 30 mA
5
–3
3
–4
4
5
–5
10
–10