HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 36

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Electrical Characteristics on Evaluation Board
Item
Noise Figure
Power Gain
Input Return Loss
Output Return Loss
1dB Gain Compression
Third order intercept point
Rev.1.00, Apr.12.2004, page 34 of 37
Symbol
NF
PG
RLin
RLout
P1dB
OIP3
Data
1.36
12.0
8.1
14.0
11
25
Unit
dB
dB
dB
dB
dBm
dBm
(VCC = 2V, IC = 10mA, Ta = 25°C)
Test Condition
f = 5.8GHz
f = 5.8GHz
f = 5.8GHz
f = 5.8GHz
f = 5.8GHz
fd = 5.8GHz, fud = 5.801GHz