HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 5

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Main Characteristics
Rev.1.00, Apr.12.2004, page 3 of 37
500
400
300
200
100
300
250
200
150
100
45
40
35
30
25
20
15
10
50
0
5
0
0
1
0.1
Collector Power Dissipation Curve
Value on PCB
(FR-4: 40 x 40 x 1.6 mm
VCE=2V
f=1GHz
Ambient Temperature
Gain Bandwidth Product vs.
DC Current Transfer Ratio vs.
Collector Current
Collector Current
Double side)
50
Collector Current
Collector Current
1
VCE=3V
100
10
VCE=1V
I
10
C
I
C
(mA)
Ta (°C)
150
(mA)
VCE=3V
VCE=1V
VCE=2V
200
100
100
0.20
0.15
0.10
0.05
35
30
25
20
15
10
30
25
20
15
10
0
5
0
5
0
1
Collector to Emitter Voltage
|S
V
f=1.8GHz
Collector to Base Voltage V
Reverse Transfer Capacitance vs.
21
CE
Typical Output Characteristics
|
2
=1V
Collector Current
,MSG, vs. Collector Current
Collector to Base Voltage
1
1
10
MSG
S21
2
2
I
C
f=1MHz
(mA)
V
CB
CE
(V)
(V)
100
3
3