HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 3

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
HSG1002
SiGeHBT
High Frequency Low Noise Amplifier
Features
Outline
Note:
Absolute Maximum Ratings
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Rev.1.00, Apr.12.2004, page 1 of 37
High power gain and low noise figure ;
MSG = 21 dB typ. , NF = 0.7 dB typ. at V
MSG = 20 dB typ. , NF = 0.8 dB typ. at V
MSG = 16 dB typ. , NF = 1.2 dB typ. at V
Transition Frequency
f
V
Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
T
CEO
= 38 GHz typ. at f = 1 GHz
Marking is "VE-".
= 3.5 V
MFPAK-4
3
4
VE-
Symbol
V
V
V
I
Pc
Pc
Tj
Tstg
C
2
1
CBO
CEO
EBO
note1
CE
CE
CE
= 2 V,I
= 2 V,I
= 2 V,I
3
C
C
C
= 5 mA, f = 1.8 GHz
= 5 mA, f = 2.4 GHz
= 10 mA, f = 5.8 GHz
2
Ratings
8
3.5
1.2
35
80
200
150
–55 to +150
4
1
1. Emitter
2. Collector
3. Emitter
4. Base
Unit
V
V
V
mA
mW
mW
°C
C
REJ03G0196-0100Z
Apr.12.2004
(Ta = 25°C)
Rev.1.00