HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 35

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
HSG1002 5.8GHz Evaluation Board
Evaluation Board Pattern Layout
Circuit
V CC
V BB
2.2 u u F
2.2 uF
39 ohm
1000 pF
10 pF
10 pF
1000 pF
1 nH
6.8 n n H
3 pF
OUT
1 pF
IN
0.2 pF
Rev.1.00, Apr.12.2004, page 33 of 37