HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 37
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HSG1002VE-TL-E
Manufacturer Part Number
HSG1002VE-TL-E
Description
IC AMP HBT SIGE 38GHZ MFPAK-4
Manufacturer
Renesas Electronics America
Datasheet
1.HSG1002VE-TL-E.pdf
(40 pages)
Specifications of HSG1002VE-TL-E
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
38GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
4-MFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HSG1002
Rev.1.00, Apr.12.2004, page 35 of 37
14
14
10
10
-10
-10
-15
-15
-20
-20
-25
-25
-30
-30
5
0
15
15
10
10
-5 -5
5
0
1
0
@VCE=2V
@VCE=2V
f=5.8GHz
f=5.8GHz
PG
PG
NF
NF
2
RLin
RLin
RLout
RLout
|S21|
|S21|
2
RLin, Rlout, |S21|
RLin, Rlout, |S21|
4
IC (mA)
IC (mA)
PG, NF-IC
PG, NF-IC
f (GHz)
f (GHz)
10
2
VS f
VS f
6
@VCE=2V
@VCE=2V
8
IC=10mA
IC=10mA
100
100
10
10