HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 7

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Rev.1.00, Apr.12.2004, page 5 of 37
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I c =10mV
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I c =10mA
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MSG
CE
CE
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=1V
=3V
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=3V
,MSG,MAG vs. Collector Current
Collector Current
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2
,MSG,MAG vs Frequency
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,MSG,MAG vs Frequency
Frequency f (GHz)
Frequency f (GHz)
MSG
MSG
10
1
1
S21
S21
S21
I
C
(mA)
MAG
MAG
MAG
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10
100
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0
5
0
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0.1
|S
V
I c =10mA
V
f=5.8GHz
|S
21
CE
CE
21
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=2V
2
=3V
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Collector Current
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,MAG vs. Collector Current
,MSG,MAG vs Frequency
MSG
Frequency f (GHz)
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MAG
S21
S21
I
C
(mA)
MAG
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