HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 9

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Rev.1.00, Apr.12.2004, page 7 of 37
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
20
10
20
10
20
10
0
0
0
-40
-40
-40
V
I
fd = 5.8 GHz
fud = 5.801 GHz
C
CE
3rd. Order Intercept Point (IP3)
3rd. Order Intercept Point (IP3)
3rd. Order Intercept Point (IP3)
= 5 mA
-30
-30
-30
= 2V
Input Power P
Input Power P
Input Power P
-20
-20
-20
-10
-10
-10
IN
IN
IN
V
I
fd = 2.4 GHz
fud = 2.401 GHz
V
I
fd = 1.8 GHz
fud = 1.801 GHz
Fundamental
C
C
CE
CE
Fundamental
(dBm)
(dBm)
(dBm)
3rd. IMD
= 10 mA
= 5 mA
Fundamental
0
0
0
3rd. IMD
= 2V
= 2V
10
10
10
20
20
20
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
20
10
20
10
20
10
0
0
0
-40
-40
-40
V
I
fd = 5.8 GHz
fud = 5.801 GHz
C
CE
= 10 mA
3rd. Order Intercept Point (IP3)
3rd. Order Intercept Point (IP3)
3rd. Order Intercept Point (IP3)
-30
-30
-30
= 2V
Input Power P
Input Power P
Input Power P
-20
-20
-20
-10
-10
-10
V
I
fd = 1.8 GHz
fud = 1.801 GHz
IN
IN
IN
V
I
fd = 2.4 GHz
fud = 2.401 GHz
C
C
CE
Fundamental
Fundamental
CE
= 10 mA
(dBm)
(dBm)
(dBm)
= 5 mA
3rd. IMD
Fundamental
0
0
0
= 2V
= 2V
3rd. IMD
10
10
10
20
20
20