HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 38

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Rev.1.00, Apr.12.2004, page 36 of 37
-10
-10
-20
-20
-30
-30
-40
-40
20
20
10
10
0
-40
-40
@VCE=2V
@VCE=2V
IC=10mA
IC=10mA
fd=5.8GHz
fd=5.8GHz
fud=5.801GHz
fud=5.801GHz
-30
-30
-20
-20
Pin-Pout, OIP3
Pin-Pout, OIP3
Pin (dBm)
Pin (dBm)
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-10
0
Pout
Pout
OIP3
OIP3
10
20