HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 39

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Part Name
HSG1002VE-
HSG1002
Package Dimensions
Ordering Information
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
Rev.1.00, Apr.12.2004, page 37 of 37
MFPAK-4
EIAJ Package Code
production before ordering the product.
A
y S
A
X
e
c
M
JEDEC Code
A-A Section
D
S A
b
b
1
10,000 pcs
Quantity
c
1
b
Mass (g) (reference value)
E
A
A
A
2
1
H
E
A
S
0.0016
L
C
Lead Material
Cu Alloy
Shipping Container
178 mm Taping Reel
I 1
Pattern of terminal position areas
b
2
e
e
L
1
P
Symbol
A
A
A
1
2
Dimension in Millimeters
Min.
0.5
0
0.5
0.15
—
0.1
—
1.35
0.7
—
1.15
0.1
0.15
—
—
—
—
Nom.
—
—
—
0.22
0.2
0.13
0.11
1.4
0.8
0.45
1.2
0.2
—
—
—
0.75
—
Max.
0.55
0.01
0.54
0.3
—
0.15
—
1.45
0.9
—
1.25
0.3
0.45
0.05
0.35
—
0.5