HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 30

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

f (MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
4200
4400
4600
4800
5000
5200
5400
5600
5800
6000
HSG1002
S Parameter
Rev.1.00, Apr.12.2004, page 28 of 37
S11
MAG
0.932
0.921
0.904
0.891
0.872
0.853
0.833
0.811
0.792
0.771
0.750
0.728
0.710
0.694
0.678
0.663
0.651
0.640
0.629
0.621
0.607
0.596
0.588
0.583
0.579
0.578
0.577
0.576
0.576
0.579
0.582
0.585
0.588
0.591
0.594
0.598
0.601
0.604
0.607
0.610
ANG
-7.6
-15.6
-23.0
-30.8
-38.3
-45.6
-52.3
-59.2
-66.2
-72.5
-78.6
-84.9
-90.4
-95.8
-101.2
-106.3
-111.1
-115.8
-120.2
-124.6
-132.3
-139.8
-146.7
-152.9
-158.7
-164.0
-169.1
-173.7
-177.8
178.2
174.4
170.9
167.5
164.3
161.3
158.2
155.5
152.7
150.1
147.4
S21
MAG
14.55
14.43
14.19
13.93
13.65
13.31
12.82
12.44
12.15
11.71
11.27
10.91
10.47
10.04
9.68
9.31
8.96
8.61
8.29
7.98
7.41
6.92
6.47
6.06
5.69
5.36
5.07
4.79
4.55
4.33
4.13
3.94
3.78
3.62
3.47
3.34
3.21
3.10
2.99
2.89
173.4
167.2
161.5
156.0
150.9
146.0
141.3
136.7
132.7
128.3
124.4
120.4
116.9
113.6
110.4
107.3
104.4
101.6
99.0
96.5
91.7
87.2
83.1
79.3
75.5
72.0
68.6
65.4
62.4
59.4
56.4
53.5
50.8
48.0
45.3
42.6
40.0
37.4
34.8
32.3
ANG
S12
MAG
0.0077
0.0127
0.0177
0.0264
0.0296
0.0345
0.0393
0.0431
0.0460
0.0497
0.0517
0.0536
0.0562
0.0579
0.0600
0.0611
0.0624
0.0642
0.0648
0.0661
0.0669
0.0683
0.0691
0.0697
0.0705
0.0707
0.0715
0.0725
0.0726
0.0736
0.0743
0.0741
0.0757
0.0762
0.0778
0.0795
0.0802
0.0811
0.0820
0.0838
ANG
30.4
85.0
81.7
72.1
69.7
62.9
60.3
55.4
52.7
50.0
46.9
44.9
42.8
40.8
39.5
36.8
34.7
33.4
32.2
30.9
28.6
27.5
25.6
23.5
23.4
22.3
21.0
21.0
20.3
20.1
19.7
19.8
19.2
18.6
19.0
18.1
17.7
18.3
17.6
17.5
(V
CE
= 3 V, I
S22
MAG
0.978
0.982
0.966
0.941
0.917
0.887
0.855
0.823
0.789
0.757
0.726
0.694
0.665
0.638
0.610
0.586
0.562
0.540
0.519
0.500
0.463
0.431
0.402
0.377
0.355
0.336
0.318
0.302
0.289
0.278
0.268
0.260
0.252
0.245
0.240
0.234
0.229
0.226
0.222
0.219
C
= 5 mA, Z
-59.4
-61.2
-64.4
-67.3
-70.3
-73.3
-75.9
-79.1
-81.9
-84.8
-87.7
-100.4
-103.7
-106.8
-110.5
-113.9
-117.2
-120.8
-124.4
ANG
-4.9
-9.6
-13.8
-18.4
-22.6
-26.4
-30.3
-33.7
-36.8
-39.8
-42.5
-45.2
-47.6
-49.9
-52.1
-53.9
-55.9
-57.7
-90.8
-93.8
-97.1
O
= 50 )