HSG1002VE-TL-E Renesas Electronics America, HSG1002VE-TL-E Datasheet - Page 8

• Manufacturer Part Number: HSG1002VE-TL-E
• Description: IC AMP HBT SIGE 38GHZ MFPAK-4
• Manufacturer: Renesas Electronics America

Specifications of HSG1002VE-TL-E

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 38GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
• Gain: 8dB ~ 19.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: 4-MFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HSG1002
Rev.1.00, Apr.12.2004, page 6 of 37
24
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
8
6
4
2
0
1
1
1
V
V
Power Gain vs. Collector Current
V
Power Gain vs. Collector Current
CE
CE
Power Gain vs. Collector Current
CE
=1V
=3V
Collector Current
Collector Current
Collector Current
=2V
f=1.8GHz
f=1.8GHz
10
10
10
f=5.8GHz
f=2.4GHz
f=2.4GHz
f=5.8GHz
I
I
C
I
C
C
(mA)
(mA)
(mA)
f=1.8GHz
f=5.8GHz
f=2.4GHz
100
100
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
1
1
Noise Figure vs. Collector Current
V
Noise Figure vs. Collector Current
V
Noise Figure vs. Collector Current
V
CE
CE
CE
Collector Current
Collector Current
Collector Current
=1V
=3V
=2V
f=1.8GHz
f=1.8GHz
f=2.4GHz
f=2.4GHz
f=2.4GHz
f=5.8GHz
f=5.8GHz
f=5.8GHz
10
10
10
f=1.8GHz
I
I
I
C
C
C
(mA)
(mA)
(mA)
100
100
100