WM8310GEB/V Wolfson Microelectronics, WM8310GEB/V Datasheet - Page 22

• Manufacturer Part Number: WM8310GEB/V
• Description: POWER MANAGEMENT SUBSYSTEM, 169BGA
• Manufacturer: Wolfson Microelectronics

Specifications of WM8310GEB/V

• Supply Voltage: 7V
• No. Of Step-down Dc - Dc Converters: 4
• No. Of Ldo Regulators: 11
• Digital Ic Case Style: BGA
• No. Of Pins: 169
• No. Of Regulated Outputs: 13
• Operating Temperature Range: -40°C To
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

WM8310
7.6
Unless otherwise noted: T
7.7
Unless otherwise noted: T
w
VPMIC (LDO12VOUT) voltage
at which device transitions
between BACKUP and OFF
states
Device Reset hysteresis
Device Shutdown
Shutdown threshold
SYSVDD voltage at which the
device forces an OFF transition
SYSOK threshold accuracy
SYSVDD voltage at which
SYSOK is asserted.
SYSLO threshold accuracy
SYSVDD voltage at which
SYSOK is de-asserted
SYSOK hysteresis
Voltage Reference
Current Reference
General
Supply voltage
(Voltage required to commence
charging; note that charging
can continue at lower supply
voltages, eg. under current
throttling conditions)
Target voltage
Charger re-start threshold
(Trickle charging starts when
battery voltage is below this
threshold)
Defective battery threshold
Defective battery timeout
Overvoltage threshold
End of Charge Current
Maximum trickle charge current
Fast charge threshold
(Fast charging fast-charge is
only possible when battery
voltage is above this threshold)
REFERENCES
BATTERY CHARGER
PARAMETER
PARAMETER
PARAMETER
A
A
= -40°C to +85ºC; Typical values are at T
= -40°C to +85ºC; Typical values are at T
V
V
V
V
SYMBOL
V
V
V
t
V
SYMBOL
V
SYMBOL
BATT_RSTRT
I
V
RES, ASSERT
SYSOK, HYST
BATT_DEF
TRKL_LIM
FAST_CHG
BATT_TGT
BATT_DEF
SHUTDOWN
V
BATT_OV
RES, HYST
V
V
V
SYSVDD
I
EOC
SYSOK
SYSLO
VREFC
IREFR
CHG_VSEL = 00
CHG_VSEL = 01
CHG_VSEL = 10
CHG_VSEL = 11
Set by CHG_ITERM
Set by CHG_TRKL_ILIM
VPMIC falling
SYSVDD falling
SYSVDD rising,
V
(2.8V to 3.5V)
SYSVDD falling,
V
(2.8V to 3.5V)
100kΩ to REFGND
SYSOK
SYSLO
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
set by SYSLO_THR
set by SYSOK_THR
A
A
= +25ºC
= +25ºC
TBD
TBD
4.05
4.15
MIN
MIN
MIN
4.3
4.0
4.1
20 to 90
CHG_V
100mV
SEL -
50 to
TYP
1.85
TYP
TYP
4.05
4.10
4.15
4.20
2.85
2.85
200
2.7
0.8
0.5
4.5
92
40
30
PP, December 2009, Rev 3.0
MAX
MAX
MAX
TBD
TBD
4.15
4.25
5.5
4.1
4.2
Pre-Production
UNIT
UNIT
UNIT
mins
mV
mV
mA
mA
%
%
V
V
V
V
V
V
V
V
V
V
22