N25Q064A13EF640F Micron Technology Inc, N25Q064A13EF640F Datasheet - Page 138

• Manufacturer Part Number: N25Q064A13EF640F
• Manufacturer: Micron Technology Inc

Specifications of N25Q064A13EF640F

• Lead Free Status / Rohs Status: Supplier Unconfirmed

DC and AC parameters
Table 31.
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Typical values given for TA = 25 °C
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to '1'.
6. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure)
7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Table 32.
138/150
tSSE
tSE
tBE
tRLRH
Symbol
Symbol
is known.
sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256).
(1)(2)
AC Characteristics (page 3 of 3)
Figure 104. Reset AC waveforms while a program or erase cycle is in progress
See
Reset Conditions
tRST
Reset
S
Alt.
Alt.
Table 32.: Reset
Reset pulse width
Subsector erase cycle time
Sector Erase Cycle Time
Sector Erase Cycle Time Vpp=VPPH
Bulk erase cycle time
Bulk erase cycle time (with VPP=VPPH)
Parameter
Conditions.
Parameter
tSHRH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Conditions
tRLRH
Min
tRHSL
0.3
0.7
0.6
60
50
©2010 Micron Technology, Inc. All rights reserved.
Typ
(2)
Min
3
3
3
120
120
Typ
Max
N25Q064 - 3 V
50
Max Unit
Unit
s
s
s
s
ns