AS4C8M16S-7TCN ALLIANCE MEMORY, AS4C8M16S-7TCN Datasheet - Page 17

DRAM 128M SDRAM 8M X 16 143MHz

AS4C8M16S-7TCN

Manufacturer Part Number
AS4C8M16S-7TCN
Description
DRAM 128M SDRAM 8M X 16 143MHz
Manufacturer
ALLIANCE MEMORY
Datasheet

Specifications of AS4C8M16S-7TCN

Data Bus Width
16 bit
Organization
8 M x 16
Package / Case
TSOP II-54
Memory Size
128 Mbit
Maximum Clock Frequency
143 MHz
Access Time
5.4 ns, 6 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
130 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / Rohs Status
 Details

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AS4C8M16S-7TCN
Quantity:
5 550
Table 12. Absolute Maximum Rating
Table 13. Recommended D.C. Operating Conditions
Table 14. Capacitance
Note: These parameters are periodically sampled and are not 100% tested.
V
V
Symbol
Symbol
Symbol
T
DD
IN
SOLDER
V
T
I
V
V
C
V
, V
V
V
P
OUT
I
, V
T
FEBRUARY 2011
DDQ
C
STG
I
OL
OH
DD
IL
OL
I/O
IH
IL
A
D
I
OUT
DDQ
( 0V ≤ V
Input Capacitance
Input/Output Capacitance
Parameter
Power Supply Voltage(for I/O Buffer)
Soldering Temperature (10 second)
IN
Output disable, 0V ≤ V
LVTTL Output "H" Level Voltage
LVTTL Output "L" Level Voltage
≤ V
Short Circuit Output Current
LVTTL Input High Voltage
LVTTL Input Low Voltage
DD
Output Leakage Current
Input Leakage Current
Power Supply Voltage
Power Supply Voltage
Ambient Temperature
Storage Temperature
Input, Output Voltage
, All other pins not under test = 0V )
Power Dissipation
(VDD = 3.3V, f = 1MHz, T
Item
( I
( I
Parameter
OUT
OUT
= -2mA )
= 2mA )
OUT
≤ V
DDQ
)
A
17
= 25°C)
(T
Min.
- 0.3
- 10
- 10
Min.
A
3.0
3.0
2.0
2.4
= 0~70°C)
2
4
- 1.0 ~ 4.6
- 55 ~ 125
-1.0 ~ 4.6
Typ.
Rating
0 ~ 70
-6/7
260
3.3
3.3
3.0
50
1
0
Max.
V
6.5
Max.
DDQ
5
3.6
3.6
0.8
0.4
10
10
+0.3
AS4C8M16S
Unit Note
Unit Note
Unit
mA
µA
µA
°C
°C
°C
pF
pF
W
V
V
V
V
V
V
V
V
1
1
1
1
1
1
1
2
2
2
2

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