AS4C8M16S-7TCN ALLIANCE MEMORY, AS4C8M16S-7TCN Datasheet - Page 8

• Manufacturer Part Number: AS4C8M16S-7TCN
• Description: DRAM 128M SDRAM 8M X 16 143MHz
• Manufacturer: ALLIANCE MEMORY

Specifications of AS4C8M16S-7TCN

• Data Bus Width: 16 bit
• Organization: 8 M x 16
• Package / Case: TSOP II-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns, 6 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 130 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / Rohs Status: Details

t
CAS# latency=3
COMMAND
DQM
CLK
CK3,
FEBRUARY 2011
CLK
DQM
t
COMMAND
CAS# latency=2
CK2,
DQ
t
CLK
DQM
COMMAND
CAS# latency=2
CK2,
PrechargeAll command to the same bank. The following figure shows the optimum time that
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.
DQ
DQ
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
Figure 7. Read to Write Interval
Figure 8. Read to Write Interval
Figure 6. Read to Write Interval
T0
NOP
T0
T0
NOP
NOP
READ A
T1
T1
NOP
T1
NOP
T2
NOP
READ A
ACTIVATE
T2
T2
BANKA
T3
NOP
the Write Command
Must be Hi-Z before
T3
T3
Must be Hi-Z before
the Write Command
NOP
NOP
the Write Command
Must be Hi-Z before
DOUT A
T4
NOP
(Burst Length ≧ 4, CAS# Latency = 3)
8
T4
(Burst Length ≥ 4, CAS# Latency = 2)
NOP
0
(Burst Length ≥ 4, CAS# Latency = 2)
T4
NOP
T5
NOP
T5
WRITE B
T5
READ A
DIN B
T6
WRITE B
0
DIN B
T6
T6
DIN B
NOP
WRITE A
DIN A
0
T7
1
NOP
DIN B
0
Don’t Care
T7
NOP
DIN B
T7
1
Don’t Care
DIN A
NOP
T8
DIN B
2
NOP
1
T8
DIN B
NOP
2
DIN A
T8
NOP
AS4C8M16S
3
2
DIN A
T9
NOP
NOP
3