AS4C8M16S-7TCN ALLIANCE MEMORY, AS4C8M16S-7TCN Datasheet - Page 18

DRAM 128M SDRAM 8M X 16 143MHz

AS4C8M16S-7TCN

Manufacturer Part Number
AS4C8M16S-7TCN
Description
DRAM 128M SDRAM 8M X 16 143MHz
Manufacturer
ALLIANCE MEMORY
Datasheet

Specifications of AS4C8M16S-7TCN

Data Bus Width
16 bit
Organization
8 M x 16
Package / Case
TSOP II-54
Memory Size
128 Mbit
Maximum Clock Frequency
143 MHz
Access Time
5.4 ns, 6 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
130 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / Rohs Status
 Details

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Quantity
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Part Number:
AS4C8M16S-7TCN
Quantity:
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Table 15. Recommended D.C. Operating Conditions
Operating Current
Precharge Standby Current in non-power down mode
Precharge Standby Current in non-power down mode
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Active Standby Current in non-power down mode
Active Standby Current in non-power down mode
Operating Current (Burst mode)
Refresh Current
Self Refresh Current
t
t
t
One bank active
Input signals are changed every 2clks
t
t
Input signals are changed every 2clks
CKE ≥ V
t
t
t
CK
CK
RC
CK
CK
CK
RC
CKE ≤ 0.2V ; for other inputs V
CK
FEBRUARY 2011
≥ t
= ∞, CLK ≤ V
= ∞, CKE ≤ V
=t
= 15ns, CKE ≤ V
= 15ns, CKE ≥ V
≥ t
= 15ns, CS# ≥ V
CK
RC
RC
(min),
(min), Outputs Open
(min)
IH
(min), CLK ≤ V
Description/Test condition
Outputs Open, Multi-bank interleave
IL
IL
(max), CKE ≥ V
(max)
IH
IH
IL
(max)
(min), CS# ≥ V
(min), CKE ≥ V
IL
(max), t
IH
≥ V
IH
DD
CK
- 0.2, V
IH
IH
= ∞
(min)
IL
≤ 0.2V
18
Symbol
I
I
I
I
I
DD2NS
I
DD2PS
DD3NS
I
DD2N
DD2P
DD3N
I
I
I
DD1
DD4
DD5
DD6
(VDD = 3.3V ± 0.3V, T
120
140
200
20
15
30
25
-6
2
2
2
Max.
-7
110
130
200
20
15
30
25
2
2
2
A
= 0~70°C)
AS4C8M16S
Unit Note
mA
mA
3, 4
3
3

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