AS4C8M16S-7TCN ALLIANCE MEMORY, AS4C8M16S-7TCN Datasheet - Page 50

• Manufacturer Part Number: AS4C8M16S-7TCN
• Description: DRAM 128M SDRAM 8M X 16 143MHz
• Manufacturer: ALLIANCE MEMORY

Specifications of AS4C8M16S-7TCN

• Data Bus Width: 16 bit
• Organization: 8 M x 16
• Package / Case: TSOP II-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns, 6 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 130 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / Rohs Status: Details

Figure 41. Full Page Random Column Write
Figure 42. Precharge Termination of a Burst
A0-A9,
A11
BA0,1
CKE
WE#
DQM
CLK
RAS#
CAS#
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
DQ
A0-A9,
A11
DQM
FEBRUARY 2011
Activate
Cammand
Bank A
High
Hi-Z
RAx
RAx
T0
T0 T1
Activate
Cammand
Bank A
(Burst Length=4, 8 or Full Page, CAS# Latency=3)
RAx
RAx
RAx
t
RRD
Write
Command
Bank A
T2
Activate
Command
Bank B
DAx0
CAx
RBx
RBx
T3 T4 T5 T6 T7 T8 T9 T10
Precharge Termination
of a Write Burst
Write Data are masked
DAx1
Write
Command
Bank A
CAx
DAx0
t
RCD
t
WR
DAx1
Write
Command
Bank B
Precharge
Command
Bank A
DBx0 DAy0 DAy1
CBx
t
RP
Write
Command
Bank A
CAy
Activate
Command
Bank A
Write
Command
Bank B
RAy
RAy
DBy0
CBy
DBy1
50
Write
Command
Bank A
DAz0 DAz1 DAz2 DBz0 DBz1 DBz2
CAz
(Burst Length=Full Page)
T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Read
Command
Bank A
CAy
Write
Command
Bank B
CBz
Precharge
Command
Bank A
Ay0
t
RP
Ay1 Ay2
Write Data
are masked
t
WR
Precharge
Command Bank B
(Precharge Temination)
Activate
Command
Bank A
RAz
RAz
Don’t Care
t
RP
Precharge Termination
of a Read Burst
AS4C8M16S
Activate
Command
Bank B
RBw
RBw