LPC2926_27_29 NXP Semiconductors, LPC2926_27_29 Datasheet - Page 77
![The LPC2926/2927/2929 combine an ARM968E-S CPU core with two integrated TCMblocks operating at frequencies of up to 125 MHz, Full-speed USB 2](/photos/41/52/415297/sot486-1_3d_sml.gif)
LPC2926_27_29
Manufacturer Part Number
LPC2926_27_29
Description
The LPC2926/2927/2929 combine an ARM968E-S CPU core with two integrated TCMblocks operating at frequencies of up to 125 MHz, Full-speed USB 2
Manufacturer
NXP Semiconductors
Datasheet
1.LPC2926_27_29.pdf
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NXP Semiconductors
LPC2926_27_29
Product data sheet
9.5 Dynamic characteristics: flash memory and EEPROM
Table 40.
T
V
[1]
Table 41.
T
V
Symbol
N
t
t
t
t
t
t
t
t
Symbol
f
N
t
ret
prog
er
init
wr(pg)
fl(BIST)
a(clk)
a(A)
clk
ret
amb
amb
DDA(ADC3V3)
DDA(ADC3V3)
endu
endu
Number of program/erase cycles.
=
=
−
−
40
40
Parameter
endurance
retention time
programming time
erase time
initialization time
page write time
flash word BIST time
clock access time
address access time
°
°
Flash characteristics
EEPROM characteristics
C to +85
C to +85
Parameter
clock frequency
endurance
retention time
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
All information provided in this document is subject to legal disclaimers.
°
°
C; V
C; V
Rev. 5 — 28 September 2010
DD(CORE)
DD(CORE)
Conditions
powered
Conditions
powered
unpowered
word
global
sector
= V
= V
DD(OSC_PLL)
DD(OSC_PLL)
ARM9 microcontroller with CAN, LIN, and USB
; V
; V
LPC2926/2927/2929
Min
200
100000
10
DD(IO)
DD(IO)
[1]
Min
10000
10
20
0.95
95
95
-
0.95
-
-
-
= 2.7 V to 3.6 V;
= 2.7 V to 3.6 V;
Typ
375
500000
-
Typ
-
-
-
1
100
100
-
1
38
-
-
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
1.05
105
105
150
1.05
70
63.4
60.3
Max
400
-
-
Unit
kHz
cycles
years
Unit
cycles
years
years
ms
ms
ms
μs
ms
ns
ns
ns
77 of 95
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