MBM29QM12DH Fujitsu Microelectronics, Inc., MBM29QM12DH Datasheet - Page 48

• Manufacturer Part Number: MBM29QM12DH
• Description: Page Mode Flash Memory 128m 8m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Read Cycle Time
Address to Output Delay
Page Read Cycle Time
Page Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Address,
CE or OE, Whichever Occurs First
AC CHARACTERISTICS
• Read Only Operations Characteristics
*1 : Test Conditions:
Device
Under
Test
Output Load:
1 TTL gate and 30 pF (Figure 4.1)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or V
Timing measurement reference level
Parameter
Figure 4.1
Input: 0.5
Output:0.5
C
L
Diode
or equivalent
V
Test Conditions
V
CCQ
6.2 k
CCQ
1N3064
3.3 V
JEDEC
2.7 k
t
t
t
t
t
t
t
AVQV
GLQV
EHQZ
GHQZ
AXQX
AVAV
ELQV
CCQ
Symbol
Diode
or equivalent
Standard
1N3064
t
t
t
PACC
t
t
t
t
t
t
ACC
PRC
OH
RC
CE
OE
DF
DF
CE
OE
CE
OE
OE
Setup
*2 : Test Conditions:
Test
V
V
V
V
V
IL
IL
IL
IL
IL
Output Load:
C
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or V
Timing measurement reference level
Figure 4.2
L
Input: 0.5
Output:0.5
V
Min
CCQ
60
20
MBM29QM12DH
30 pF (Figure 4.2)
5
Device
3.6 V *
Under
Test
2.7 V to
Max
1
60
20
60
20
20
20
V
Test Conditions
V
CCQ
C
Value
CCQ
L
V
Min
CCQ
70
30
5
1.95 V *
1.65 V to
CCQ
Max
2
70
30
70
30
30
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
-60
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