MBM29QM12DH Fujitsu Microelectronics, Inc., MBM29QM12DH Datasheet - Page 51

• Manufacturer Part Number: MBM29QM12DH
• Description: Page Mode Flash Memory 128m 8m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

50
MBM29QM12DH
Note : Typical Erase conditions T
Sector Erase Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Input Pin Capacitance
Output Pin Capacitance
Control Pin Capacitance
Control Pin Capacitance (WP/ACC)
Input Pin Capacitance
Output Pin Capacitance
Control Pin Capacitance
Control Pin Capacitance (WP/ACC)
ERASE AND PROGRAMMING PERFORMANCE
TSOP(1) PIN CAPACITANCE
FBGA PIN CAPACITANCE
Typical Program conditions T
Parameter
Parameter
Parameter
100,000
A
Min
-60
A
25°C , V
C
C
C
C
C
C
C
C
IN
OUT
IN2
IN3
IN
OUT
IN2
IN3
Symbol
Symbol
25°C , V
Limits
CC
50.3
Typ
0.5
6.0
CC
2.9 V
V
V
V
V
V
V
V
V
2.9 V, Data
IN
OUT
IN
IN
IN
OUT
IN
IN
Test Setup
Test Setup
0
0
0
0
0
0
0
Max
0
100
200
2
checker
cycle
Unit
µs
s
s
Typ
11
Excludes programming time
prior to erasure
Excludes system-level overhead
Excludes system-level overhead
7
8
8
Typ
11
7
8
8
Value
Value
(T
A
Comments
Max
10
12
11
12
Max
10
12
11
12
25°C , f
1.0 MHz)
Unit
pF
pF
pF
pF
Unit
pF
pF
pF
pF