MBM29QM12DH Fujitsu Microelectronics, Inc., MBM29QM12DH Datasheet - Page 49

• Manufacturer Part Number: MBM29QM12DH
• Description: Page Mode Flash Memory 128m 8m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

48
MBM29QM12DH
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low during
Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High
during Toggle Bit Polling
Data Setup Time
Data Hold Time
Output Enable Setup Time
Output
Enable Hold
Time
Read Recover Time Before Write
Read Recover Time Before Write
(OE High to CE Low)
CE Setup Time
WE Setup Time
CE Hold Time
WE Hold Time
Write Pulse Width
CE Pulse Width
Write Pulse Width High
CE Pulse Width High
Word Programming Operation
Sector Erase Operation*
V
Rise Time to V
Rise Time to V
Voltage Transition Time*
Write Pulse Width*
OE Setup Time to WE Active*
CE Setup Time to WE Active*
CC
• Write (Erase/Program) Operations
Setup Time
ID
ACC
Read
Toggle and Data Polling
Parameter
*
2
*
3
2
1
2
2
2
-60
JEDEC
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
DVWH
WHDX
GHWL
WHEH
EHWH
WLWH
WHWL
AVWL
WLAX
AVAV
GHEL
ELWL
WLEL
ELEH
EHEL
Symbol
Standard Min Typ Max
t
t
t
t
WHWH1
WHWH2
t
t
VACCR
t
t
t
t
t
t
t
GHWL
t
t
t
OESP
t
t
GHEL
t
VLHT
t
t
t
t
VIDR
t
t
t
OEH
t
t
WPH
WPP
ASO
AHT
OES
CPH
VCS
CSP
WC
WS
WH
WP
AS
AH
DS
DH
CS
CH
CP
500
500
100
60
15
30
25
10
35
35
20
20
50
V
0
0
0
0
0
0
0
0
0
0
0
4
4
4
CCQ
3.6 V *
0.5
6
2.7 V to
1
Value
Min
500
500
100
70
15
35
30
10
40
40
25
25
50
V
0
0
0
0
0
0
0
0
0
0
0
4
4
4
CCQ
1.95 V *
Typ
0.5
6
1.65 V to
2
Max
(Continued)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
µs
µs
µs
µs
s