MBM29QM12DH Fujitsu Microelectronics, Inc., MBM29QM12DH Datasheet - Page 9
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MBM29QM12DH
Manufacturer Part Number
MBM29QM12DH
Description
Page Mode Flash Memory 128m 8m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MBM29QM12DH.pdf
(78 pages)
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8
MBM29QM12DH
Legend: L
*1 : Manufacturer and device codes may also be accessed via a command register write sequence.
*2 : WE can be V
*3 : Refer to section on Sector Protection.
*4 : V
*5 : Also used for the extended sector group protection.
*6 : Protect “outermost” 2
Auto-Select Manufacturer
Code*
Auto-Select Device
Code*
Extended Auto-Select
Device Code*
Read*
Standby
Output Disable
Write (Program/Erase)
Enable Sector Group
Protection*
Verify Sector Group
Protection*
Boot Block Sector Write
Protection*
Temporary Sector Group
Unprotection*
Reset
DEVICE BUS OPERATION
See “MBM29QM12DH Command Definitions Table” in “ DEVICE BUS OPERATION”.
V
CCQ
CCQ
1
1
3
Operation
2.7 V to 3.6 V for 60 ns
1.65 V to 1.95 V for 70 ns.
3,
3,
6
*
*
V
4
4
5
2
IL
, H
IL
if OE is V
V
IH
, X
4K words on both ends of the boot block sectors (SA0, SA1, SA268, SA269) .
CE OE WE A
IL
H
X
X
X
L
L
L
L
L
L
L
L
L
V
, OE at V
IL
or V
MBM29QM12DH User Bus Operations Table
V
H
X
H
X
X
X
L
L
L
L
L
L
ID
-60
IH
,
IH
H
H
H
H
H
X
H
H
X
X
X
L
initiates the write operations.
A
A
H
H
X
X
X
X
X
L
L
L
L
0
0
0
Pulse input. See DC Characteristics for voltage levels.
A
A
A
H
H
H
H
L
L
X
X
X
X
X
1
1
1
A
A
A
H
H
X
X
X
X
X
L
L
L
L
2
2
2
A
A
A
H
H
X
X
X
X
X
L
L
L
L
3
3
3
A
A
A
X
X
X
X
X
X
X
X
X
L
L
4
4
4
A
A
A
X
X
X
X
X
X
X
X
X
L
L
5
5
5
A
A
A
L
L
L
L
X
X
L
L
X
X
X
6
6
6
A
A
A
X
X
X
X
X
L
L
L
L
L
L
7
7
7
V
V
V
V
V
V
A
A
A
X
X
X
X
X
ID
ID
ID
ID
ID
ID
9
9
9
DQ
High-Z
High-Z
High-Z
Code
Code
Code
Code
Code
D
DQ
D
X
X
X
OUT
15
IN
to
0
RESET
V
H
H
H
H
H
H
H
H
H
H
H
L
ID
ACC
WP/
X
X
X
X
X
X
X
X
X
H
X
X
L