FW912 Micron Semiconductor Products, FW912 Datasheet - Page 2

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

GENERAL DESCRIPTION
performance, high-density, nonvolatile memory solu-
tions that can significantly improve system
performance. This new architecture features a two-
memory-bank configuration that supports dual-bank
operation with no latency.
or page mode data transfer; a conventional asynchro-
nous bus interface is provided as well.
only, by configuring soft protection registers with dedi-
cated command sequences. For security purposes, two
64-bit chip protection registers are provided.
functions are fully automated by an on-chip write state
machine (WSM). Two on-chip status registers, one for
each of the two memory partitions, can be used to moni-
tor the WSM status and to determine the progress of
the program/erase task.
compatibility with existing EEPROM emulation soft-
ware packages.
cess technology.
flash) for the latest data sheet.
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
The MT28F642D20 and MT28F642D18 are high-
A high-performance bus interface allows a fast burst
The devices allow soft protection for blocks, as read-
The embedded WORD WRITE and BLOCK ERASE
The erase/program suspend functionality allows
These devices are manufactured using 0.18µm pro-
Please refer to the Micron Web site
PART NUMBER
MT28F642D20FN-705 TET
MT28F642D20FN-705 BET
MT28F642D20FN-804 TET
MT28F642D20FN-804 BET
MT28F642D18FN-705 TET
MT28F642D18FN-705 BET
MT28F642D18FN-804 TET
MT28F642D18FN-804 BET
Cross Reference for Abbreviated Device Marks
(www.micron.com/
MARKING
PRODUCT
FW906
FW905
FW907
FW908
FW909
FW910
FW911
FW912
Table 1
ASYNC/PAGE/BURST FLASH MEMORY
2
ARCHITECTURE AND MEMORY
ORGANIZATION
memory (bank a and bank b) for simultaneous READ
and WRITE operations, which are available in the fol-
lowing bank segmentation configurations:
organizations.
DEVICE MARKING
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to the Micron part
numbers in Table 1.
MARKING
SAMPLE
FX905
FX908
FX910
FX912
FX906
FX907
FX909
FX911
The Flash devices contain two separate banks of
• Bank a comprises one-fourth of the memory and
• Bank b represents three-fourths of the memory, is
Figures 2 and 3 show the bottom and top memory
Due to the size of the package, Micron’s standard
contains 8 x 4K-word parameter blocks and
31 x 32K-word blocks.
equally sectored, and contains 96 x 32K-word
blocks.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SAMPLE MARKING
MECHANICAL
FY906
FY905
FY907
FY908
FY909
FY910
FY911
FY912
4 MEG x 16
©2002, Micron Technology, Inc.
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