FW912 Micron Semiconductor Products, FW912 Datasheet - Page 24

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

NOTE: 1. Full status register check can be done after each block or after a sequence of blocks.
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
FULL STATUS REGISTER CHECK FLOW
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR5 is cleared only by the CLEAR STATUS REGISTER command in cases where multiple blocks are erased before full
CONFIRM Command
BLOCK ERASE Passed
Read Status Register
Read Status Register
Issue BLOCK ERASE
Full Status Register
Issue ERASE SETUP
and Block Address
Check (optional)
Command and
status is checked.
Block Address
BLOCK ERASE
BLOCK ERASE Flowchart
Completed
SR 7 = 1?
SR1 = 0?
SR3 = 0?
SR5 = 0?
Start
Bits
Bits
YES
YES
YES
YES
1
Figure 7
NO
NO
NO
NO
BLOCK ERASE Failed
ERASE Attempted
on a Locked Block
V
PP
SUSPEND?
NO
ERASE
Range Error
SUSPEND Loop
YES
ERASE
ASYNC/PAGE/BURST FLASH MEMORY
24
BUS
OPERATION COMMAND COMMENTS
WRITE
WRITE
READ
Standby
Repeat for subsequent blocks.
Write FFh after the last BLOCK ERASE operation to
reset the device to read array mode.
BUS
OPERATION COMMAND COMMENTS
Standby
Standby
Standby
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
ERASE
SETUP
ERASE
Data = 20h
Block Addr = Address
within block to be erased
Data = D0h
Block Addr = Address
within block to be erased
Status register data
Toggle OE# or CE# to
update status register
Check SR7
1 = Ready, 0 = Busy
Check SR1
1 = Detect locked block
Check SR3
1 = Detect V
Check SR5
1 = BLOCK ERASE error
4 MEG x 16
2
3
©2002, Micron Technology, Inc.
PP
ADVANCE
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