FW912 Micron Semiconductor Products, FW912 Datasheet - Page 41

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

READ TIMING PARAMETERS
NOTE: 1. WAIT# is shown active LOW.
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
SYMBOL
t
t
t
t
AA
ACE
AOE
R C
2. For the MT28F642D18,
DQ0–DQ15
A0–A21
WAIT#
MIN
ADV#
RST#
WE#
OE#
CE#
-70
1
V
V
V
V
MAX
V
V
V
V
V
V
V
V
V
V
V
V
OH
OH
OL
OL
70
70
25
70
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
SINGLE ASYNCHRONOUS READ OPERATION
t
RWH = 250ns (MAX); for the MT28F642D20,
MIN
High-Z
High-Z
-80
t
t
AA
RC
MAX
80
80
25
80
UNITS
n s
n s
n s
n s
ASYNC/PAGE/BURST FLASH MEMORY
t
RWH
41
t
ACE
VALID ADDRESS
SYMBOL
t
t
t
RWH
O H
O D
2
t
RWH = 200ns (MAX).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
AOE
MIN
VALID OUTPUT
0
-70
t
OH
UNDEFINED
MAX
15
–
t
OD
4 MEG x 16
MIN
0
-80
©2002, Micron Technology, Inc.
ADVANCE
MAX
25
–
UNITS
n s
n s
n s