FW912 Micron Semiconductor Products, FW912 Datasheet - Page 42

• Manufacturer Part Number: FW912
• Description: Flash Memory Technology
• Manufacturer: Micron Semiconductor Products

READ TIMING PARAMETERS
NOTE: 1. WAIT# is shown active LOW.
4 Meg x 16 Async/Page/Burst Flash Memory
MT28F642D18_3.p65 – Rev. 3, Pub. 8/02
SYMBOL
t
t
t
t
AA
RC
ACE
AOE
2. For the MT28F642D18,
DQ0–DQ15
WAIT#
A3–A21
A0–A2
ADV#
RST#
WE#
MIN
OE#
CE#
1
-70
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OH
OL
OL
IH
IH
IH
IH
IH
IH
IH
ASYNCHRONOUS PAGE MODE READ OPERATION
IL
IL
IL
IL
IL
IL
IL
MAX
70
70
25
70
t
RWH = 250ns (MAX); for the MT28F642D20,
High-Z
MIN
-80
t
t
RWH
AA
High-Z
t
ACE
MAX
80
80
25
80
VALID ADDRESS
t
AOE
UNITS
ns
ns
ns
ns
ASYNC/PAGE/BURST FLASH MEMORY
42
OUTPUT
VALID ADDRESS
VALID
SYMBOL
t
t
t
OD
OH
RWH
ADDRESS
1
VALID
OUTPUT
t
VALID
RWH = 200ns (MAX).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
APA
ADDRESS
VALID
OUTPUT
MIN
VALID
0
-70
t
ADDRESS
OH
MAX
VALID
UNDEFINED
15
OUTPUT
–
VALID
t
4 MEG x 16
MIN
OD
0
-80
©2002, Micron Technology, Inc.
ADVANCE
MAX
25
–
UNITS
ns
ns
ns